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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4743
DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed
APPLICATIONS *Designed for character display horizontal deflection output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current- Continuous
w w
scs .i w
1500 V 800 V 6 V 6 A 7 A 16 A 50 W
.cn mi e
IC(peak)
Collector Current-Peak
IC(surge)
Collector Current-Surge Collector Power Dissipation @ TC=25 Junction Temperature
PC
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4743
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; RBE=
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA ; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
B
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
B
1.5
V
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
hFE
DC Current Gain
tf
Fall Time
w
w. w
sem isc
IC= 1A ; VCE= 5V
ICP= 5A , IB1= 1A; fH= 31.5kHz
.cn i
15
500
A
30
0.4
s
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4743
w w
scs .i w
.cn mi e
isc Websitewww.iscsemi.cn


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